实验室博士生庞书杰，邓玉辉老师等人联合撰写的论文《PSA-Cache: A Page-State-Aware Cache Scheme for boosting 3D NAND Flash Performance》被《ACM Transactions on Storage》录用。ACM Transactions on Storage为CCF 推荐A类国际期刊。论文将于2023年正式发表。
论文摘要如下:
Garbage collection (GC) plays a pivotal role in the performance of 3D NAND flash memory, where Copyback has been widely used to accelerate valid page migration during GC. Unfortunately, copyback is constrained by the parity symmetry issue: data read from an odd/even page must be written to an odd/even page. After migrating two odd/even consecutive pages, a free page between the two migrated pages will be wasted. Such wasted pages noticeably lower free space on flash memory and cause extra GCs, thereby degrading SSD performance. To address this problem, we propose a page-state-aware cache scheme called PSA-Cache, which prevents page waste to boost the performance of NAND Flash-based SSDs. To facilitate making write-back scheduling decisions, PSA-Cache regulates write-back priorities for cached pages according to the state of pages in victim blocks. With high write-back-priority pages written back to flash chips, PSA-Cache effectively fends off page waste by breaking odd/even consecutive pages in subsequent garbage collections. We quantitatively evaluate the performance of PSA-Cache in terms of the number of wasted pages, the number of GCs, and response time. We compare PSA-Cache with two state-of-art schemes GCaR and TTflash in addition to a baseline scheme LRU. The experimental results unveil that PSA-Cache outperforms the existing schemes. In particular, PSA-Cache curtails the number of wasted pages of GCaR and TTflash by 25.7% and 62.1%, respectively. PSA-Cache immensely cuts back the number of GC counts by up to 78.7% with an average of 49.6%. Furthermore, PSA-Cache slashes the average write response time by up to 85.4% with an average of 30.05%.